| 摘要 |
<p>PURPOSE:To prevent the generation of thermal strain on a wafer by a method wherein a pin having the vacuum-attraction hole, to be used tor supporting of the vertically moving water, is provided on the treatment plate with which the semiconductor wafer is heated up for the purpose of placing the semiconductor wafer, and the semiconductor wafer is preheated by the heat radiated from the plate before the semiconductor wafer is placed on the plate. CONSTITUTION:An arm comes down after the semiconductor wafer 5 attracted to a conveying arm has reached the prescribed position located above the pin 6, and the semiconductor wafer 5 is attracted, held and fixed to the pin 6 by a vacuum attraction hole 7. The pin 6 begins a lowering movement intermittently by the driving of a pulse motor 14. While the semiconductor wafer 5 is being placed on a plate 1, the wafer 5 is preheated by the heat radiated from the plate 1 which is heated up to 200 deg.C or above. As the semiconductor wafer 5 is heated up even after the wafer 5 has been delivered to the plate 1 from the pin 6, the distortion generating due to the effect of the preheating performed before the above-mentioned heating can be prevented, and the temperature can be raised further.</p> |
