| 摘要 |
PURPOSE:To form an Al wiring at a stroke, and to flatten the upper surface of a substrate including an insulating film by changing Al as a wiring material into AlN as an insulator through nitrization. CONSTITUTION:A process (a) in which an Al film 5 is shaped on a substrate 1, a process (b) in which wiring patterns G consisting of a shielding material 7 effective to high-speed ion nitrogen are formed on the Al film 5, processes (b), (c) in which nitrogen ions are implanted in the substrate 1 twice or more at different acceleration voltage, and processes (d)-(f) in which the wiring patterns G are removed in from the substrate 1 after the nitrogen-ion implantation process are provided. A process, in which the Al film is polished, and a process in which the Al film is removed partially are not included in the method, and an the wiring patterns are formed by implanting nitrogen ions in the unified Al film and selectively shaping AlN. Accordingly, wirings and an inter-layer insulating film are formed as the surface is left as it is flattened.
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