发明名称 PROTECTIVE FILM MATERIAL FOR STOPPING EPITAXIAL GROWTH
摘要 PURPOSE:To enable a desired layer to be protected from the external atmosphere by respectively epitaxially forming a first protective film which can be removed under an atmosphere and temperature by which the desired layer is not damaged, and thereon a second protective film which can chemically and selectively removed. CONSTITUTION:After the epitaxial formation till a desired layer, a first protective film 6 which can easily be sublimated and removed under a temperature and atmosphere by which the desired layer is not damaged is formed subsequently, and a protective film layer 8 of a plurality of layers including a second protective film layer 7 which can selectively removed is formed on the first protective film 6. The second protective film 7 prevents the first protective film 6 from contacting with various atmospheres during the process performed outside the epitaxy chamber, and after this process, the contaminant on the surface of the sample generating during the process can be removed along with the second protective film 7. With this, the clean first protective film 6 can be exposed and put into the epitaxy chamber.
申请公布号 JPS63138721(A) 申请公布日期 1988.06.10
申请号 JP19860286322 申请日期 1986.12.01
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 INADA MASAKI;EDA KAZUO;OTA TOSHIMICHI
分类号 H01L21/314;H01L21/20;H01L21/203;H01L21/26 主分类号 H01L21/314
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