| 摘要 |
PURPOSE:To form a high-quality deposited film while improving a film deposition speed and supressing film formation on a high energy light pervious window, by using IR rays simultaneously with high energy light. CONSTITUTION:IR ray 8 pervious windows 9 are provided to the peripheral wall of a reaction vessel 5. The IR rays 8 contg. the wavelength having the oscillation absorption of raw material gaseous molecules such as silanes are inputted through said windows 9 into the vessel 5 and are projected in parallel to the surface of a substrate 4. The photoslysis of the gaseous raw materials by the high energy light 1 such as mercury lamp in the part 10 which is an incident path of the IR rays 8 is accelerated by the simultaneous and parallel projection of the IR rays 8. While the deposition speed of the deposited film 3 on the substrate 4 surface is thereby improved, the film formation on the inside surface, on the vessel 5 side, of the high energy light 1 pervious window 2 is considerably decreased as the gaseous raw materials are mostly consumed by the film deposition on the substrate 4 surface. |
