| 摘要 |
<p>A semiconductor laser having a buried hetero junction, more particularly a DCPBH laser, in which the active layer (3) is located in a "mesa", which is laterally bounded by a boundary region comprising at least one blocking layer (6) having a larger band gap than the active layer. According to the invention, the boundary region comprises an absorption layer (13) having a smaller band gap than the active layer, this absorption layer being located at such a small lateral distance (s) from the active layer that it lies within the amplification profile of the first-order lateral oscillation mode. As a result, the first and higher oscillation modes as well as the thyristor effect are suppressed.</p> |
