METHOD OF CONTROLLED, UNIFORM DOPING OF FLOATING ZONE SILICON

摘要

14 A two-step process for fabricating impurity doped float-zoned single crystal silicon boules which exhibit substantially controlled and uniform concentrations of the impurity is disclosed. This process, when applied to polycrystalline silicon rods in a controlled environment of oxygen results in the production of high purity float-zoned silicon crystals with substantially uniform oxygen concentrations of up to 32 ppma which are not currently attainable utilizing the conventional Czochralski silicon boule fabrication methods of the semiconductor industry.