| 摘要 |
<p>An apparatus and method for forming a trench bounded region (78) isolating two areas on a semiconductor substrate. The trench intercepts the electric field lines which are generated by a potential difference between the two areas. The trench is filled with a silicon nitride compound (92) which has a thermal coefficient of expansion which substantially matches that of the silicon substrate (18). The location of the trench may be defined by a single mask which is also used to define the active and field isolation regions on the silicon substrate. Doping of the trench bottom (89) may be performed to enhance isolation. The process may be easily incorporated into existing VLSI fabrication processes.</p> |
