发明名称 PRODUCTION OF THIN AMORPHOUS TA ALLOY FILM
摘要 PURPOSE:To easily produce the titled thin amorphous alloy film having excellent mechanical properties, corrosion resistance, etc., by respectively heating Ti and Si to melt and evaporate in a vacuum and depositing the vapor thereof by evaporation on a cooled substrate, thereby forming the thin film expressed by the specific formula on the substrate. CONSTITUTION:Ta1 and Si2 are respectively held in crucibles 3, 4 and are cooled by cooling water. The substrate 6 is provided above the same and is satisfactorily cooled by liquid nitrogen 9. After the inside of a chamber 10 is evacuated to a vacuum by a vacuum pump 11, electron beams are generated by electron beam sources 12, 13 to simultaneously heat and melt materials 1, 2 to be evaporated, by which Ta and Si are evaporated in the atom state and are stuck in the form of a homogeneous alloy on the substrate 6. The thin amorphous Ta alloy film which is expressed by Ta1-xSix (x=0.1-0.4) and has a high crystallization temp. is thereby easily formed on the substrate 6.
申请公布号 JPS63125666(A) 申请公布日期 1988.05.28
申请号 JP19860270182 申请日期 1986.11.12
申请人 NEC CORP 发明人 YOSHITAKE TSUTOMU;KUBO YOSHIMI;IGARASHI HITOSHI
分类号 C23C14/14;C23C14/24;C23C14/30 主分类号 C23C14/14
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