| 摘要 |
PURPOSE:To obtain a forward-taper etching shape of high dimensional precision, by using a chloro-fluorocarbon gas of prescribed pressure for dry etching of an SiO2 film while using an inversely trapezoidal resist as a mask. CONSTITUTION:A resist 9 shaped in an inverse trapezoid is formed on an SiO2 film 10 provided on an Si substrate 11. Plasma etching is conducted by using a chloro-fluorocarbon gas of about 100 Pa. While falling vertically on the film 10, accelerated ions of CF<+>3 get also into a shadowed space 13, and thereby etching is started from the lower end of the resist 9. SiF4, CO and CO2 are produced in the reaction of the CF<+>3 ious with SiO2, and they are exhausted. By this method, a forward taper shape is obtained.
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