| 摘要 |
PURPOSE:To obtain a highly reliable LSI by forming a titanium nitride layer between a titanium silicide and an SiO2 to prevent the gate breakdown strength of a second MOSFET from being deteriorated. CONSTITUTION:The source, drain and gate film 2 of an N-type first MOSFET are formed on an Si substrate 1, and first and second common gate electrodes are formed of polycrystalline sllicon 3, a titanium silicide 4 and a titanium nitride 5. The gate film 6 of a P-type second MOSFET and a polycrystalline silicon layer 7 made of source, drain and channel are formed to laminate an NMOSFET and a PMOSFET. Since the SiO2 6 of the P-type second MOSFET is formed on a thermally stable titanium nitride layer 5, an Si is not precipitated in a boundary between the nitride 5 and the SiO2 6, but a flat boundary is obtained. Thus, a laminated CMOSFET which suppresses the deterioration of the gate film breakdown strength of the second MOSFET can be formed. |
