| 摘要 |
<p>A semiconductor device utilizing the resonant-tunneling effect, such as a light emitting-resonant-tunneling bipolar transistor, comprises stacked first through fifth semiconductor layers (16, 15B2, 15W, 15B1, 13). The semiconductor device has an energy level condition of ¦Ec3 - Ec1 ¦=¦Ev3 - Ev5¦, where Ec3 is a resonant energy level of electrons in a conduction band of the third layer (15W) and Ev3 is a resonant energy level of holes in a valence band thereof, and Ec1 is an energy level of a conduction band of the first layer (16) and Ev5 is an energy level of a valence band of the fifth layer (13).</p> |
