| 摘要 |
PURPOSE:To obtain an excellent intermediate layer having few localizing levels, manufacture a solar cell of high quality, and increase the deposition speed of a film, by using a doped Si target, and making alpha-Si:H film deposite applying a sputtering method in a mixed gas atmosphere of argon and hydrogen in which hydrogen concentration is specified. CONSTITUTION:An N-type layer is formed by a sputtering method in a mixed gas atomosphere of argon and hydrogen wherein a crystal silicon target doped with phosphorus of 10<18>-10<20> atom/cm<3> is used. A P-type layer is formed by the same method wherein a crystal silicon target doped with boron of 10<18>-10<21> atom/cm<3> is used. When a P-type layer is formed, the hydrogen concentration starts from the lower limit value, 1-15 vol.%, and reaches the upper limit value, 40-50 vol.%, at the boundary surface of a P-N junction. During this process, the change of concentration is set in a linear form. When an N-type layer is formed, the hydrogen concentration starts from the upper limit value, 40-50 vol.%, and reaches the lower limit value, 1-15 vol.% at the surface of N-type layer. During this process, the change of concentration is set in a linear form. In such a manner, a P-N type hydrogenated amorphous silicon film is deposited. |
