SEMICONDUCTOR LIGHT EMITTING DEVICE STRUCTURE

摘要

PURPOSE:To conduct the heat by the light emission of light emitting devices efficiently to a heat sink and to enable the light emission in the excellent convergency of light and in high luminance by fixing with conductive adhesives semiconductor light emitting devices formed with a through hole in a semiconductor substrate and the heat sink which has a protuberance which can be inserted in the through hole. CONSTITUTION:A conical frustum-shaped through hole H is formed at the center of a semiconductor substrate B made of n-type GaAs, an active region which includes a p-n junction PN is formed by diffusing Zn along the inner wall of the through hole H, a p-side electrode E1 is provided on the inner wall of the through hole H and on the bottom surface of the substrate B and a ring shape n-side electrode E2 is provided on the upper surface of the substrate B. Since a heat sink 1 is made of a nonconductive material, a thin film layer 5 made of a conductive material for conducting electricity to the electrode E1 on the inner wall of the through hole H is provided on the surface on which light emitting devices are attached of the heat sink 1. The height of a protuberance 2 reaches to nearly a half of the through hole H and conductive adhesives 7 are deposited in the remaining region of the through hole H. The heat generated in the active region is immediately conducted to the heat sink 1 via the conductive adhesives 7 since the through hole H of the light emitting devices and the heat sink 1 can directly be connected by the protuberance 2.