| 摘要 |
PURPOSE:To improve the planar uniformity of a diffused emitter layer, and to enhance the emitter efficiency by composing the emitter of a metallic silicide film, a diffused layer formed under the metallic silicide film and a silicon oxide layer formed in a boundary region between metallic silicide film and the diffusion layer. CONSTITUTION:An emitter forming region is exposed, the periphery of an emitter region is coated with an insulating film 9, a metal is deposited, and the ions of an impurity for shaping an emitter diffusion layer are implanted in high concentration by energy where the ions are stopped in a metallic layer 3. The surface of the metallic layer 3 is coated with a heat-resistant film 6, and an silicide reaction is generated through annerling. Enzyme contained in the metal is segregated to the silicon side by the formation of an silicide, and an extremely shallow silicon oxide film layer 2 is formed just under the silicide 4. When the resistance of the silicide is lowered through heat treatment, the impurity more than a precipitation limit in the silicide is precipitated on the interface of the silicide 4 and silicon 2, and the extremely shallow emitter diffusion layer is shaped. Accordingly hole currents are reduced in the presence of the silicon oxide layer, thus improving emitter injection efficiency.
|
