| 摘要 |
PURPOSE:To obtain an FET which enables accurate detection of a gas above 150 deg.C, by employing zinc oxide as the material of a semiconductor layer. CONSTITUTION:A drain electrode 2 is formed on an insulation substrate 1 and an N-type semiconductor layer 3 comprising zinc oxide is formed on the drain electrode 2 in an Ohmic connection. At this point, the semiconductor layer 3 is extended onto the insulation substrate 1. Moreover, a gate electrode 4 is formed on the semiconductor layer 3 as opposed to the drain electrode 2, where the gate electrode 4 is extended onto the insulation substrate 1. A source electrode 5 is formed on the semiconductor layer 3 in an Ohmic connection. Then, a power source and a load are connected between the drain electrode 2 and the source electrode 5 and another power source is connected between the drain electrode and the gate electrode 4. Under such a condition, as a gas to be inspected is brought into contact with the electrode 4, current flowing through the load varies according to the density thereof and thus, the gas can be detected depending on the current.
|
