| 摘要 |
PURPOSE:To obtain an MOS transistor suitable for formation in high density of a large-scale integrated circuit having no deterioration of the characteristic by reducing resistance, by contriving to smooth shallow junction and the completed surface, and moreover by thickening a field oxide film by a method wherein a source region and a drain region are formed comparatively thick according to selectively grown layers formed on a substrate. CONSTITUTION:After a field insulating film 2 is adhered to be formed on the main surface of a semiconductor substrate 1, an opening part 3 is formed at an MOS transistor forming part according to selective etching. Then a passivation film 13 consisting of SiN, etc. is formed on the substrate 1 corresponding to a gate part in the opening part 3 thereof. Then epitaxial layers 9, 10 are selectively grown respectively in the opening part 3 between the passivation film 13 and the field insulating film 2, and the layers 9, 10 thereof are made as a source region and a drain region. Then after the whole is oxidized, the passivation film 13 on the gate part is removed, then a gate insulating film 4 is formed on the substrate 1 corresponding to the gate part, a gate material film 5 is adhered to be formed, patterning is performed to form the gate part 7, and an aiming MOS transistor is obtained. |
