摘要 |
PURPOSE:To prevent a washing liquid from being deteriorated, by exposing a semiconductor to be washed under an atmosphere of hydrochloric acid steam containing ozone. CONSTITUTION:washing process is performed under an atmosphere of hydrochloric acid containing ozone. Namely when hydrochloric acid is used as steam, adhesion of corpuscles and contamination due to impurities can be prevented and the hydrochloric acid steam goes everywhere, so that washing can be performed uniformly and effectively. Moreover, because ozone in stead of hydrogen peroxide water is contained, a processing liquid can be prevented from being deteriorated. For example, when hydrochloric acid steam containing ozone is made to flow inside a processing container and when the semiconductor substrate to be washed is exposed to the steam for e.g., ten minutes, contaminants on the substrate surface are changed chemically into a state wherein the contaminants are easily dispersed, and moreover rinsing is performed by pure water for e.g., ten minutes, so that the contaminants can be removed from the substrate surface.
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