| 摘要 |
PURPOSE:To stabilize the potential of a semiconductor chip and to prevent the generation of circuit oscillation or parasitic thyristors by a method wherein a third ground electrode is provided which establishes an ohmic contact with the semiconductor chip, extends across the semiconductor chip, and connects to a first ground pad. CONSTITUTION:In the vicinity of the periphery of a semiconductor chip 6, a first and second grounds pads 7 and 8 independent from each other are built for the establishment of connection with the outside. A third ground electrode 11 makes an ohmic contact with the semiconductor chip 6 through an isolating region in the vicinity of a region where a front stage amplifying circuit 2 is formed. The third ground electrode 11 runs across the region of an output stage amplifying circuit 1 and connects to the first ground pad 7, without an ohmic contact with the semiconductor chip 6 in said region. With the device being designed as such, the third ground electrode 11 effectively draws out the parasitic currents involving the semiconductor chip 6 in the region mounted with the front stage amplifying circuit 2, which ensures that other circuit will not be affected in any way.
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