| 摘要 |
PURPOSE:To prevent the temperature fall of a wafer by improving the heat conduction to the wafer by introducing an inactive gas in between the wafer and a susceptor and in between the susceptor and a heater respectively. CONSTITUTION:A heater 6 is heated and the temperature is set at 500-600 deg.C at a normal pressure 60 Torr, a reaction chamber 5 is made at a comparatively low pressure to an extent of, e.g., 0.5-4 Torr and under these conditions, a film is formed on a wafer 9 by a well-known method. In this case, an He gas 10 is introduced in between the heater 6 and a susceptor 7 and in between the susceptor 7 and the wafer 9 respectively by introduction lines 81 and 82, these regions are each improved the heat conduction by making a pressure to an extent of, e.g., 6-10 Torr and the temperature change of the wafer 9 is made minimum. This can reduce the temperature change in comparison with conventional equipment so can make the film quality of the wafer 9 homogeneous.
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