HIGH FREQUENCY POWER DEVICE MANUFACTURING PROCESS BY PARTIAL SILICON GROWTH

摘要

This invention is concerned with the fabrication method of power device for high frequency by a selective silicon epitaxial layer growing method. The epitaxial layer (2) of the first low concentrated N-type impurity is grown on the high concentrated silicon plate (1) and the high concentrated p-type impurity is diffused on the part of the epitaxial layer. The epitaxial layer (5) of the second low concentrated N-type impurity is grown and the high concentrated N-type impurity (6) and the oxidation flim layer (3a) of SiO2 are formed. The method simplifies the fabrication process and excludes the formation of the protecting shielding layer for silicon etching.