| 摘要 |
<p>This invention provides a MOS semiconductor device having submicron transistor, including a semiconductor substrate (40) of a first conductive type, and having a predetermined power source voltage applied thereto, comprising a gate insulation layer (46) on the semiconductor substrate (40); a gate electrode (47) on the gate insulation layer (46); impurity regions (43) of a second conductive type in the semiconductor substrate (40) and adjacent to the gate electrode (47) and the gate insulation layer 46), the device substantially satisfying the equation 0.9V < 6.2 x (L/2) < 1.1V, where V is the power source voltage in volts, and L is the length of the gate electrode (47) in microns. When the impurity regions have a first impurity regions (13) and a second impurity regions (14) having a higher concentration than that of the first impurity regions (13), the device is substantially satisfied the alternative equation 0.9 V < 8.4 x (L/2) < 1.1 . e</p> |
