发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To secure soldering adhesion force between electrodes and leads, by removing generation of an alloy layer Ni3Sn4 made of Ni and Sn when a soldering adhesion between the electrodes and the leads is performed. CONSTITUTION:When a pair of electrodes 3 between which a semiconductor substrate is interposed are made to adhere to leads on their both ends so that an axial shape is formed, the paired electrodes 3 and the paired leads 4 are adhered to each other with a Pb-Sn group soldering material 2 and formed in such structure that adhesion strength of them is secured at their soldering parts. Furthermore, the parts of the electrode 3, in contact with outside air, are covered with Ni plating 9, and the Ni plating 9 on the part of electrode lead adhesion is removed. Thus, mechanical strength between the electrodes 3 and the external connection leads 4 in the semiconductor element can be secured and the amount of the soldering material can be decreased by the simplification of a soldering process and a jig.</p>
申请公布号 JPS6387752(A) 申请公布日期 1988.04.19
申请号 JP19860231165 申请日期 1986.10.01
申请人 HITACHI LTD;HITACHI HARAMACHI SEMICONDUCTOR LTD 发明人 TOIDA HIROTOSHI;HIDAKA TOSHIYUKI;OKABE HIROYUKI
分类号 H01L23/48 主分类号 H01L23/48
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