| 摘要 |
PURPOSE:To enable an end face light emission which is stable against the temperature and has small temperature dependency of output light by sequentially stacking in part of the current injection region, contacting with an active layer having a low band gap energy value (E value), a semiconductor layer of the same conductivity type having a high E value, then a semiconductor layer having a moderate E value, and a semiconductor layer of a different conductivity type having a high E value. CONSTITUTION:This semiconductor light-emitting diode has a double hetero junction structure in which an active layer of a first conductivity type is formed on a substrate. The active layer has a band gap energy Eg=Eg. The diode also includes a striped light emitting region. In part of the current injection region, there is provided a semiconductor structure comprised of, sequentially stacked and contacted with the active layer, a semiconductor layer of the first conductivity type and Eg=Eg2 (Eg2>Eg1), a semiconductor layer of the first conductivity type and Eg=Eg3 (Eg1<Eg3<Eg2) and a semiconductor layer of a second conductivity type and Eg=Eg4 (Eg4>Eg3). This LED has a high fiber coupling output and the temperature stability of the optical output is remarkably high. |
