发明名称 METHOD OF MODULATING SEMICONDUCTOR LASER
摘要 PURPOSE:To generate a short optical pulse without a pattern effect, by superimposing a modifying current, which is smaller than the current value when an RZ pulse current is '1', on the RZ pulse current when it is a '0', and driving a semiconductor laser with a newly formed RZ pulse current. CONSTITUTION:When an RZ pulse current Isa is '1', an optical pulse is generated, and a carrier density is rapidly decreased. When the current Isa is a '0', the optical short pulse is not generated. Therefore the carrier density N is not decreased rapidly. The relationship with the current value is set at a suitable value for the rapid decrease of the carrier density N at the time of the '1'. Thus even if the short optical pulse is not generated at the '0' value, the carrier density N is made to be Ni at the rising time point of the next RZ current pulse. Therefore, the carrier density N at the rising time point of the RZ pulse both for the values of '0' and '1' always becomes a constant value Ni. A previous modulating pattern Ip does not depend on the value of '0' or '1'. Thus the short optical pulse having the constant position, width and amplitude is obtained.
申请公布号 JPS6384182(A) 申请公布日期 1988.04.14
申请号 JP19860230950 申请日期 1986.09.29
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 HABARA TAKASHI
分类号 H04B10/60;H01S5/062;H01S5/068;H04B10/00;H04B10/2507;H04B10/40;H04B10/50;H04B10/524;H04B10/54 主分类号 H04B10/60
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