| 摘要 |
PURPOSE:To improve sensitivity over a wide wavelength region by constituting a photoconductive layer by alternately laminating semiconductor layers which consist basically of silicon, consist partly of finely crystallized semiconductor regions contg. carbon and are different in carbon concn. and, the carbon concn. of one of which semiconductor layers changes in the layer thickness direction. CONSTITUTION:A barrier layer 12 is formed on the surface of a conductive base 11 constituted of an aluminum drum and the photoconductive layer 13 having superlattice structure is formed on the barrier layer. A surface layer 14 is formed on the layer 13. The photoconductive layer 20 is constituted by consisting the same of an electric charge transfer layer 21 formed on the layer 12 and an electric charge generating layer 22 formed thereon. The layer 22 of such separated-function type photoconductive layer 20 has the superlattice structure. The photoconductive layer 13 and the charge generating layer 22 are respectively basically 30-500Angstrom and are constituted by alternately laminating thin carbon-contg. microcrystalline silicon (muc-Si:C) layers 31 and 32 which are different in carbon concn. from each other. The carbon concns. of either or both of the thin muc-Si:C layers 31, 32 are changed in the layer thickness direction. |
