| 摘要 |
PURPOSE:To remove influence of discrepancy of mask positioning at manufacture of an insulated gate self turn-off thristor by a method wherein the pattern of a first mask material is formed at the same time with a gate electrode, the edge part of a second emitter layer is defined by the mask material thereof, and the second emitter layer is formed by selfalignment at the center part in the well of the insulated gate element for turn-off. CONSTITUTION:On a substrate, on which an n-type base layer 2 and a p-type base layer 3 are formed on a p<+> type emitter layer 1, a gate electrode 51 is formed by a polycrystalline silicon film interposing a gate insulating film 4 between them. At this time, an island type first mask material 52 is formed separated by the prescribed distance from the gate electrode 51 using a polycrystalline silicon film the same with the gate electrode 51. After then, a second mask material 6 to cover the gap between the gate electrode 51 and the first mask material 52 is formed according to a photo resist, for example. Moreover, a mask is formed at the center part of an n-type well 8, and p-type impurities are doped using the mask thereof and the gate electrode 51 as masks to form a p<+> type source layer 9. Accordingly, the so-called DSA-type MOSFET to serve as the insulated gate element for turn-off can be formed. |
