| 摘要 |
PURPOSE:To provide high dark resistance and positive chargeability by forming a specified photoconductive amorphous silicon carbide layer contg. 0.1-10,000ppm group IIIa element of the periodic table on a substrate. CONSTITUTION:A photoconductive amorphous silicon carbide (a-SiC) layer 5 contg. 0.1-10,000ppm group IIIa element of the periodic table is formed on a substrate 1. The a-SiC layer 5 contains 1-90atom% C, or 1-90atom% C and 5-50atom% H. The resulting sensitive body is made especially positively chargeable, high dark resistance and superior photosensitivity are provided, and a protective surface layer and a carrier injection blocking layer are made practically unnecessary. |
