| 摘要 |
PURPOSE:To enhance the density of a complementary semiconductor device by a vertical n-channel field effect transistor on the side of a groove in which a crystal surface of the side formed on a silicon substrate is in a plane (100) and a vertical p-channel field effect transistor on the side of the groove in which a crystal surface of the side is in a plane (110). CONSTITUTION:An SiO2 layer 2 is formed to divide an element on a p-type silicon substrate 1 of plane azimuth (110) to form an n-well 3. Then, a vertical- shaped groove is so formed that the plane azimuth of the sidewall of the groove of the n-well region becomes a plane (110) 4 and the plane azimuth of the sidewall of the groove becomes a plane (110) 5. Then, after a gate insulating film is formed on the sidewall of the groove, gate electrodes 6 are formed on the side of the groove and desired surface, a high concentration p-type diffused layer 7 is formed on the Si surface of the n-well region, and a high concentration n-type diffused layer 8 is formed on the Si surface of the p-type substrate region. A vertical n-channel field effect transistor is formed on the side 5, and a vertical p-channel field effect transistor is formed on the side 4. Thus, the operation can be accelerated, and the elements are formed in high density. |
