| 摘要 |
<p>PURPOSE:To form an energy storage region to a resist surface layer, and to shape a fine resist pattern in a high contrast state by giving sub-exposure to the whole surface of a resist or the periphery of a desired pattern besides main exposure for selectively baking the resist pattern. CONSTITUTION:The sufficient progress of the reduction of a film in a drawing section is prevented at a time 9' when the film reduction process 7' of a non- drawing section receiving a proximity effect is completed. That is, main exposure 3, through which an original desired pattern is exposed selectively extending over the whole resist depth direction, and sub-exposure 4 through which a resist is exposed only to a resist surface layer 5 and energy is stored are conducted. The film reduction 12 of a drawing section is performed in the resist surface layer 5 at a time 13 when the film reduction 11 of the non-drawing section is completed. Accordingly, the lowering of a contrast which has been obliged to deteriorate can be recovered and improved remarkably.</p> |
