| 摘要 |
PURPOSE:To prevent an open drain output circuit from being broken due to a static electricity by connecting a diode between the source and the drain of an MOSFET. CONSTITUTION:A lower breakdown strength diode D2 than a parasitic diode D1 is connected between the source S and the drain D of an MOSFET 1 of an open drain output circuit which outputs a gate input from the drain D to an output terminal 3. Accordingly, when a large voltage due to a static electricity is momentarily applied to the terminal 3, a current first flow through a diode D2 to protect against the static electricity which cannot be protected only by the diode D2 to prevent it from being broken due to the static electricity. |
