| 摘要 |
PURPOSE:To decrease output low/high propagation time by conducting a transistor (TR) for drawing out a base charge of a TR connected between an output terminal and a low potential point in response to the provision of a signal commanding a high level of the output terminal. CONSTITUTION:When a low-level signal is inputted, SBDnpn TRs 4, 16 with Schottky barrier diodes are nonconductive, and a SBDnpn TR 6 is conductive. The base charge of a SBDnpn TR 5 is drawn out rapidly through a Schottky barrier diode 18 and the SBDnpn TR 6 and the potential of a connecting point A is decreased rapidly, then the SBDnpn TR 5 is nonconductive at the same time when the SBDnpn TR9 and npn TR 10 of Darlington connection are conducted. Thus, a current fed to the output terminal 3 through the npn TR 10 from a high-potential power connection terminal 1 is not sucked by the SBDnpn TR 5 but boosts the output terminal 3 to a high level immediately. |
