Integrated device for shielding charge injection into the substrate, in particular in driving circuits for inductive and capacitive loads.

摘要

This integrated device for shielding injected charges in driving circuits for inductive and/or capacitive loads comprises four integrated structures including a first barrier region (26) with high resistivity which surrounds the buried layer (25) of the epitaxial flyback pocket (4) which may be brought at a potential lower than ground on the side of the buried layer (25) which faces the driving circuit pocket (20); a first charge collecting region (29-31) provided in the epitaxial flyback pocket (4); a third low-loss diode structure (35-37, 39), formed in an epitaxial pocket (15) which is insulated from the flyback pocket (4) and is arranged between the latter and the driving circuit, and connected so as to clamp the voltage between the epitaxial flyback pocket (4) and the substrate (1) to the diode direct conduction voltage; and, finally, a last barrier structure formed by a charge collecting region (53-55) connected to the supply voltage (V cc).