| 摘要 |
PURPOSE:To obtain the positional relationship of a mask or a reticle and a wafer with high precision by mounting an optical scanner scanning the reticle imaged onto a wafer surface by a projection optical system or the image of a mark formed onto the mask and a photodetector detecting the reflected beams of the mark image. CONSTITUTION:Optical scanners 160-166 scanning mark images shaped onto a reticle 110 or a mask imaged onto formed onto a mask the surface of a wafer 130 by a projection optical system 120 and photodetectors 170, 175 detecting the reflected beams of the mark image are installed to an ultraviolet exposure device in which the reticle 110 or the mask is irradiated with ultraviolet rays and the reticle 110 or the pattern image on the mask is projected and exposed onto the wafer 130 by the projection optical system 120. Beams 200, 205 for detecting the mark having approximately the same wavelength as excimer laser beams for exposure are projected, the transmitted beams of patterns 180, 185 for detecting the mark shaped onto the reticle 110 are imaged onto the wafer 130 by the projection lens 120 through the optical scanners 160-166, and the reflected beams from the wafer are received by the photodetectors 170, 175, thus detecting the X-Y coordinates of the mark. |
