| 摘要 |
<p>PURPOSE:To eliminate the disorder of running speed and realize a superhigh speed IC circuit, by forming plural sets of a cathode, a grid, and an anode, which consist of a high melting point metal, on an insulating substrate, covering each set by a capsule while separating the sets each other, making each separated area vacuum, and making electrons produced in each area run. CONSTITUTION:An insulating SiO2 membrane 15 is used to cover an Si substrate 14, over which a high melting point metal layer of such as W and Mo is formed by a spattering. Then a cathode 11, a grid electrode 12, and an anode 13, which are of a small radius of curvature, are formed at intervals less than 0.5 mum respectively, by a wellcontrollable reactive ion etching, and such sets including electrodes 11 to 13 are arranged numerously in parallel. After that, all the surface is covered by a capsule 17 of a ceramics such as alumina, the sets of electrodes are divided by the legs projecting downward from the capsule 17, and the each vacuum area 16 is made inside the capsule 17. The electrons radiated in the electric field are made run only in each vacuum area 16, and the interference between the elements is cut off perfectly.</p> |
