| 摘要 |
PURPOSE:To maintain excellent characteristics and to permit sure control of the phase transfer temp. from amorphous to crystal by incorporating Ge, Te and >=1 kinds selected from 5 kinds of elements Al, Ga, In, Zn, and Ni as essential components into elements constituting a thin film. CONSTITUTION:A substrate, the information recording thin film to be formed thereon and a protective film are the main constituting elements of a titled medium. The recording thin film contains the germanium (Ge) and tellurium (Te) and at least >=1 kinds selected from 5 kinds of the elements (Al, Ga, In, Zn, Ni) as the essential components. The compsn. expressed by the formula is more preferable in order to exhibit an excellent effect. (TeyGe100-y)100-xMx, where M designated as >=1 kinds of the elements selected from (Al, Ga, In, Zn, Ni), (x) designated as atomic % of M in the thin film and (y) as atomic % of Te in (Te and Ge) are specified to a 2<=x<=20, 30<=y<=70 range. The transfer temp. of the thin film from the amorphous to crystal is thereby widely controlled. |
