MANUFACTURE OF MASK FOR X-RAY LITHOGRAPHY

摘要

PURPOSE:To form a base layer and a photoelectric absorption layer into one layer by a method wherein mask patterns are buried in a silicon oxide film formed by coating with silanol solution and later baking process. CONSTITUTION:A metallic layer 11 in high X-ray absorption factor is formed on the surface of a mask holding frame base 10 and then the layer 11 is patterned to form mask patterns 12. Next, the surface of mask forming base layer including the mask patterns is coated with silanol solution containing silicon compound and then the mask patterns 12 are buried in a silicon film 13 formed by baking process after coating with the silanol solution. Finally, a throughhole 14 is made from the back surface of mask holding frame base 10 to the mask pattern 12.