| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming aluminum wiring whose surface conditions are satisfactory. SOLUTION: This formation method includes a process of forming an insulating layer 2 on one main surface of a semiconductor substrate 1, a process of forming aluminum wiring including silicon on the insulating layer 2 by sputtering, and a process of forming a passivation film 4 on the insulating layer 2 and an aluminum wiring 3. In this case, the surface part (surface of a pad) of the location, where the passivation him 4 is not made of the aluminum wiring 3, is removed.
|
