发明名称 PROCESSOR OF SEMICONDUCTOR SAMPLE AND PROCESSING METHOD
摘要 PROBLEM TO BE SOLVED: To contrive to enhance uniformity in a contact structure and a wiring structure by a method wherein a gas supply port is positioned at an intermediate position between an upper electrode and a lower electrode to supply a gas for plasma. SOLUTION: A power is introduced from an upper electrode 13 or an antenna into the interior of a chamber 10 to discharge, thereby producing plasma. A wafer 15 mounted on a lower stage 11 is etched with a plasma gas. A gas supply part 12 is structured by a radial pipe disposed radially from the center as an axis, annular pipe, and a vertical pipe serving also as a supporter. A plurality of pipes are interconnected so as to introduce the plasma gas. It is possible to adjust arbitrarily the number and placement of the radial pipe, the annular pipe, or the vertical pipe. An interval of the neighboring vertical pipe is set to be a wafer diameter or more so as to insert the wafer 15. The wafer 15 is mounted just under the gas supply part by a conveyance robot.
申请公布号 JP2000357681(A) 申请公布日期 2000.12.26
申请号 JP19990170293 申请日期 1999.06.16
申请人 SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC 发明人 KISHIMOTO KIYOSHI
分类号 H01L21/302;H01L21/205;H01L21/306;H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/302
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