| 摘要 |
PURPOSE:To enhance the production efficiency and to form a high-quality amorphous semiconductor layer by providing a thrusting means for moving a cylindrical substrate to a desired height at the lower part in a reaction chamber to facilitate the attachment and detachment of the substrate. CONSTITUTION:The lid part 16 of the reaction vessel 1a is opened, a thrusting rod 15 is moved to a desired height, a thrusting ring 14 is placed on the rod 15, and further a dummy ring 4 and a substrate 5 are successively fixed to a substrate holder 3. The rod 15 is then slowly lowered to place the ring 14 at a specified position, then an upper dummy ring 6 is fixed to the substrate holder 3, and the lid part 16 is closed. Under such conditions, an a-Si layer is formed on the surface of the substrate 5, the lid 16 is opened after the film is formed, and the rod 15 is slowly lifted to a specified height. The upper dummy ring 6 is then detached, held up while supporting the inner peripheral surface of an a-Si photosensitive drum, and detached from the substrate holder 3. By this process, a high-quality and high-reliability amorphous semiconductor layer is formed on the surface of the substrate 5 at a low cost. |
