| 摘要 |
PURPOSE:To form an SiC film having various excellent characteristics on a substrate surface by repeating many times a stage for alternately introducing a C-contg. gaseous compd. and Si-contg. gaseous compd. into a vacuum vessel in which the substrate heated to a specific temp. is put. CONSTITUTION:The substrate 2 consisting of a quartz plate, etc., is placed on a susceptor 3 for supporting in a reaction chamber 1 and is heated to 500-900 deg.C by a heater 4. The inside of the reaction chamber 1 is simultaneously evacuated by a pump 6 to about 10<-4>Torr vacuum and in succession thereof, the C-contg. gaseous compd. which is carbohydrate such as CH4, C2H6 or C3H8 or CClH3 or CCl2H2 contg. C and Cl is introduced for one second from a pipe 8 through a solenoid valve 10 into the chamber. After the solenoid valve 10 is closed, the gaseous compd. contg. Si and Cl such as SiClH3 or SiCl2H2 is introduced for one second from a pipe 7 through a solenoid valve 9 into the chamber. The SiC film as a light emitting element material or as a material for high-temp. transistors and diodes is formed on the substrate 2 at a relatively low temp. by repeating such operation many times. |
