| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of sufficiently scavenging a gas staying in a processing chamber for baking, and to provide a device for manufacturing a semiconductor capable of scavenging a gas staying in the processing chamber for baking. SOLUTION: A heating device 100 has an upper cover 103 having a heater stage 101, a shutter 102, and an exhaust outlet 103a. A gas 8 generated from a resist film when a semiconductor substrate is heated is exhausted from the exhaust outlet 103a and an inside of the processing chamber 105 is scavenged by moving the shutter 102 and the upper cover 103 after the semiconductor substrate is carried out from a processing chamber 105 on completion of a heating process, to decrease the volume of the inside of the processing chamber 105 sealed other than the exhaust outlet 103a down from the volume of the processing chamber 105 at the time of carry-in of the semiconductor substrate. COPYRIGHT: (C)2005,JPO&NCIPI
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