| 摘要 |
<p>PURPOSE:To remove nonadherence and defective connection at the time of the connection of wires due to the softening of a resin, etc. in case of wire bonding, to improve yield in an assembly process, and to enhance the reliability of a semiconductor device by forming threelayer structure by a substrate and each specific insulator and insulator supporter and shaping a kerf reaching up to the insulator from the substrate. CONSTITUTION:An insulator 11 not softened at at least 400 deg.C or less and having excel lent adherence is formed onto at least one surface of a substrate 10 to which a semicon ductor device is shaped, and an insulator supporter 12 not softened at at least 400 deg.C or less and having superior adherence even with said insulator 11 is formed onto one surface of the insulator 11. A kerf 13 reaching up to at least the insulator 11 from the substrate 10 is shaped, and said semiconductor device is isolated by the kerf 13. The insulator 11 such as an SiO2 film 11 through a CVD method or thermal oxidation is formed onto the back of the substrate 10 such as a wafer 10, and the insulator supporter 12 such as polycrystalline silicon 12 is shaped onto the lower surface of the SiO2 film 11. The kerfs 13 reaching up to at least the SiO2 film 11, maximally, up to the midway of the polycrystalline silicon 12, and trenches 14 for splitting the device into dice 15 are formed through a dicing device.</p> |
