| 摘要 |
<p>PURPOSE:To improve the effective sensitivity of a photosensitive material and to enable the implementation of excellent lithography by a method wherein a fluorescent material is disposed on the opposite side to the energy beam source side of the photosensitive material and a secondary irradiation beam generated by the fluorescent material is applied to the photosensitive material together with an energy beam. CONSTITUTION:An energy beam emitted from an energy beam source 1 is applied to a photosensitive material 6 through a mask material retaining thin film 4 whereon a pattern-form mask material 3 is formed, so as to transfer a pattern of the mask material 3 onto the photosensitive material 6. In such a lithographic method, a fluorescent material 8 is disposed on the opposite side to the energy beam source 1 side of the photosensitive material 6, and a secondary irradiation beam is generated from the fluorescent material 8 exposed to the energy beam and is applied to the photosensitive material 6 together with the aforesaid energy beam. For instance, a coating liquid for lithography prepared by dispersing particulates of BaSi2O5:Pb in polyvinyl alcohol is applied on a silicon wafer 5 provided with an oxide film, so as to for a fluorescent material layer 7, and subsequently a resist 6 is applied thereon by coating. Next, X-rays are appied and there-after the resist is developed.</p> |
