| 摘要 |
PURPOSE:To be able to satisfy the characteristics of both a thin film optical sensor and a TFT formed simultaneously by composing semiconductor layers for use in the sensor group and thin film transistor group mainly of a solid solution of CdS, CdSe and CdTe. CONSTITUTION:Semiconductor layers for use in thin film optical sensor group and thin film transistor groups 6a-6g obtained by depositing, patterning and heat treating are formed mainly of a solid solution of CdS, CdSe and CdTe. Further, the semiconductor layers of the sensor 3 and TFT desirably have 0.02 or larger and 0.2 or smaller of (x) in (CdSSe)1-xTex, and are heat treated at 250-400 deg.C to be simultaneously obtained. Thus, since the semiconductor layers of the sensors and the TFT can be simultaneously formed, a mass production effect can be improved. |
