| 摘要 |
PURPOSE:To enable the temperature to be detected with high precision by means of providing a thermometer with a cryogenic element on the same chip. CONSTITUTION:A cryogenic thermometer 2 comprising a PN junction, a Josephson junction device 3, an MOS device 4 activating even at cryogenic temperature and a superconducting transistor 5 are formed on the same substrate. The capacity is fluctuated abruptly at a specified temperature in either concentration in a P type inpurity diffused layer while the temperature differs with the concentration. The higher the concentration i.e. the lower the resistivity, the larger the capacity. The concentration can be controlled precisely by ion implantation so that the temperature abruptly changing the capacity may be specified accurately. Through these procedures, the temperature can be detected with high precision. |
