| 摘要 |
PURPOSE:To enable the coexistence of an IIL operating at high speed, an NPN Tr and a vertical type PNP Tr by constituting an emitter for the PNP Tr formed in a third island region of an emitter region shallower than a base region and shaping a base from a base region diffused from the surface of the third island region. CONSTITUTION:A semiconductor integrated circuit consists of a P-type substrate 21, an N-type layer 22, N<+> type buried layers 23a-23c, P<+> type isolation regions 24, island regions 25a-25c, a P-type buried base region 26, N<+> type collector regions 27, P<+> type base leading-out regions 28, a P<+> type injector region 29, an N<+> type emitter contact region 30, a P-type base region 31, an N<+> type emitter region 32, an N<+> type collector contact region 33, a P<+> type collector buried layer 34, an N-type base region 35, P<+> type collector leading-out regions 36, an N<+> type base contact region 37, a P-type emitter region 38, an oxide film 39, and electrodes 40. A vertical type PNP Tr formed of the shallowly shaped emitter region 38 in the third island region 25c is unified and coexists with an IIL formed in the island region 25a and an NPN Tr shaped in the island region 25b. |
