| 摘要 |
PURPOSE:To obtain a high current amplification factor while minimizing leakage currents, and to reduce power consumption by constituting both an npn Tr and a pnp Tr in predetermined layer arrangement by wideband gap emitters. CONSTITUTION:A pnp Tr 17 consists of a p-type impurity diffusion layer 5, an n-type InGaAsP layer 2 and a p-type InGaAsP layer 3, and these layers form an emitter, a base and a collector, respectively. An npn Tr 16 is composed of the n-type InGaAsP layer 2, the p-type InGaAsP layer 3 and an n-type InP layer 4, and these layers shape an emitter, a base and a collector, respecrively. A p-type impurity diffusion layer 6 forms a base 14. The emitter 11 is connected to a positive voltage source, and the base 12 and the emitter 13 to a reference voltage source and currents are inputted to the base 14 and outputted from the collector 15, thus organizing an IIL. The emitter and the base for the npn Tr 16 are made up of the layer 2 and the layer 3, respectively the emitter and a source for the pnp Tr 17 consist of the layer 5 and the layer 2, respectively and both layers construct wideband gap emitters. |
