| 摘要 |
PURPOSE:To obtain an amorphous semiconductor thin film with excellent photoelectric characteristics, by radiating a light on the surface to grow a thin film, and applying a CVD method wherein the wavelength of the light corresponds to at least one higher-order bonding of constitution atom and H out of resonance wavelengths of amorphous semiconductor constitution atom and H. CONSTITUTION:A substrate 5 is mounted on a substrate holder 6 in a vacuum chamber 1 in which the pressure is reduced, and the substrate 5 is heated by a heater 9 in the substrate holder 6. From a gas supplying inlet 10, material gas and Hg vapor are supplied to the vicinity of substrate. In accordance with the material gas, a light of specified wavelength is radiated from light sources 2a and 2b through a window 4a. Ultraviolet ray is radiated from a low pressure mercury lamp 8 through a window 4b, and Hg is excited which is made to react with the material gas. Then the oscillation exitation of the higher-order bonding like Si-H2 is activated, and abstraction of H by H radical in vapor phase is accelerated. As the result, H of the higher-order bonding is decreased, and the deposition in the mode of lower-order bonding is prioritized. Thereby, a uniform film is obtained so that an amorphous semiconductor thin film having excellent photoelectric characteristics is obtaind. |
