| 摘要 |
PURPOSE:To obtain a semiconductor integrated circuit device, which has high performance and a manufacturing process of which is simplified, by simultaneously forming leading-out layers for source and drain electrodes and an emitter layer by a diffusion from an silicon film shaped onto these layers. CONSTITUTION:A base layer 5, source-drain layers 6, 7 and a gate section 201 are shaped, not only windows for leading out source-drain electrodes but also a window for forming at least an emitter layer are bored to a passivation film 401, and an N-type high impurity-concentration silicon film is deposited, and patterned and etched so as to coat the window boring sections. An impurity is introduced from silicon films 202-204, and a source-electrode leading-out layer 10, a drain-electrode leading-out layer 11 and an emitter layer 12 are shaped. Contact windows for a base and a gate and the like are bored, and electrodes are formed. |
