| 摘要 |
PURPOSE:To improve the productivity of the title reactor by providing many openings of a photoirradiation window part at a specified angle to the thickness direction to increase the antifogging effect of the photoirradiation window when raw gas is photochemically decomposed by excitation light in the photochemical reactor. CONSTITUTION:An inert gas such as Ar for preventing the fogging for the photoirradiation window is introduced into a lamp chamber 1 provided with a low- pressure mercury lamp 4 from a gas inlet pipe 9, and sent into a reaction chamber 2 wherein a substrate 6 is arranged through the photoirradiation window 3 having many openings 5 consisting of synthetic quartz sheet having 5mm thickness. Besides, gaseous Si3H8 (trisilane) diluted with gaseous He is introduced from a raw gas inlet pipe 7. The Si3H8 is photochemically decomposed by the light emitted from the lamp 4, and an amorphous Si film is formed on the surface of the substrate 6. In this case, the opening 5 of the light irradiation window 3 is shaped in the form of a column having 1mm diameter, and inclined at an angle of 15-75 deg. to the thickness direction of the photoirradiation window 3. The interval between the respective openings is controlled to 5mm. As a result, the antifogging effect of the photoirradiation window is improved, and the productivity of the amorphous Si film is increased. |
